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Oral presentation

Real-time monitoring of interfacial strained Si layers during oxidation on Si(001) surface by XPS using high brightness synchrotron radiation

Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*

no journal, , 

High resolution O1s and Si2p photoelectron spectroscopy using synchrotron radiation was employed to clarify layer-by-layer oxidation reaction mechanisms at an Si(001) surface from a viewpoint of point-defect generation due to oxidation-induced strain at SiO$$_{2}$$/Si interface. Beta- and alpha-Si components in Si2p$$_{3/2}$$ spectra, which are assigned to the first and second strained Si layers, show significant decrease during step-by-step temperature increase. Because of the band bending measured by O1s peak position, the observed decrease of beta-Si and alpha-Si components is assigned to not only by a structural relaxation of SiO$$_{2}$$ network due to thermal annealing effects, but also due to point-defect generation at SiO$$_{2}$$/Si interface.

Oral presentation

Real time SR-XPS on initial oxidation process at Si(110)-16$$times$$2 surface

Yamamoto, Yoshihisa*; Togashi, Hideaki*; Kato, Atsushi*; Hasegawa, Satoshi*; Goto, Seiichi*; Nakano, Takuya*; Suemitsu, Maki*; Narita, Yuzuru*; Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

We have investigated the initial oxidation process on an Si(110)-16$$times$$2 surface by real time synchrotron radiation photoemission spectroscopy (SR-XPS). As a result, a rapid initial oxidation regime was found to exist on this surface, which is not present on other crystal orientations. Analyses of the O1s spectra suggest insertion of oxygen atoms at the Si-Si bonds as the predominant process during initial oxidation. The rapid initial oxidation is accompanied by decrease of the Si2p subpeak that is related to Si(110)-16$$times$$2 reconstruction, indicating the preferential oxidation at the pentagon pair.

Oral presentation

STM observation on initial oxidation process at Si(110)-16$$times$$2 surface

Togashi, Hideaki*; Takahashi, Yuya*; Kato, Atsushi*; Konno, Atsushi*; Suemitsu, Maki*; Asaoka, Hidehito

no journal, , 

no abstracts in English

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